#2MBI1200U4G-170 FUJI 2MBI1200U4G-170 New IGBT Array & Module Transistor Dual Pack Dual N Channel 1.6 kA 2.57 V 6.25 kW 1.7 kV Module, 2MBI1200U4G-170 pictures, 2MBI1200U4G-170 price, #2MBI1200U4G-170 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Transistor Polarity: Dual N Channel
DC Collector Current: 1.6
Collector Emitter Saturation Voltage Vce(on): 2.57
Power Dissipation Pd: 6.25
Collector Emitter Voltage V(br)ceo:
Transistor Case Style: Module
No. of Pins: 10
Operating Temperature Max:150
IGBT Array & Module Transistor Dual Pack Dual N Channel 1.6 kA 2.57 V 6.25 kW 1.7 kV Module
