#BSM50GB120DLC EUPEC BSM50GB120DLC New Insulated Gate Bipolar Transistor 115A I(C) 1200V V(BR)CES N-Channel MODULE-7, BSM50GB120DLC pictures, BSM50GB120DLC price, #BSM50GB120DLC supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: BSM50GB120DLC
Pbfree Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: MODULE-7
Pin Count: 7
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 7.57
Case Connection: ISOLATED
Collector Current-Max (IC): 115 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN Diode
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 460 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Pbfree Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: MODULE-7
Pin Count: 7
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 7.57
Case Connection: ISOLATED
Collector Current-Max (IC): 115 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN Diode
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 460 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 115A I(C) 1200V V(BR)CES N-Channel MODULE-7